Assembly of Complex Nano-Structure from Single Atoms-Chemical Identification, Manipulation and Assembly by AFM-

• MORITA Seizo

  Department of Electrical, Electronic and Information Engineering, Osaka University

• SUGIMOTO Yoshiaki

  Department of Electrical, Electronic and Information Engineering, Osaka University

• OOYABU Noriaki

  Department of Electrical, Electronic and Information Engineering, Osaka University

• CUSTANCE Óscar

  Department of Electrical, Electronic and Information Engineering, Osaka University

• ABE Masayuki

  Department of Electrical, Electronic and Information Engineering, Osaka University

• POU Pablo

  Departamento de Fısica Teŕica de la Materia Condensada, Universidad Autonoma de Madrid

• JELINEK Pavel

  Institute of Physics, Academy of Sciences of the Czech Republic

• PÉREZ Rubén

  Departamento de Fısica Teŕica de la Materia Condensada, Universidad Autonoma de Madrid

Bibliographic Information

Other Title

• 複素ナノ構造体を組み立てる―原子間力顕微鏡で原子を識別・操作・組立―
• フクソ ナノ コウゾウタイ オ クミタテル ゲンシカンリョク ケンビキョウ デ ゲンシ オ シキベツ ソウサ クミタテ

Abstract

  An atomic force microscope (AFM) under noncontact and nearcontact regions operated at room-temperature (RT) in ultrahigh vacuum, is used as a tool for topography-based atomic discrimination and atomic-interchange manipulations of two intermixed atomic species on semiconductor surfaces. Noncontact AFM topography based site-specific force curves provide the chemical covalent bonding forces between the tip apex and the atoms at the surface. Here, we introduced an example related to topography-based atomic discrimination using selected Sn and Si adatoms in Sn/Si(111)-(√3 ×√3 ) surface. Recently, under nearcontact region, we found a lateral atom-interchange manipulation phenomenon at RT in Sn/Ge(111)-c(2×8) intermixed sample. This phenomenon can interchange an embedded Sn atom with a neighbor Ge atom at RT. Using the vector scan method under nearcontact region, we constructed “Atom Inlay”, that is, atom letters “Sn” consisted of 19 Sn atoms embedded in Ge(111)-c(2×8) substrate. Using these methods, now we can assemble compound semiconductor nanostructures atom-by-atom.<br>

Journal

• Shinku

  Shinku 50 (3), 181-183, 2007

  The Vacuum Society of Japan

Keywords

• Electrical and Electronic Engineering
• Surfaces, Coatings and Films
• Condensed Matter Physics

Details

• CRID: 1390282679041798912
• NII Article ID: 10019928168
• NII Book ID: AN00119871
• DOI: 10.3131/jvsj.50.181
• ISSN: 18809413
• ISSN: 05598516
• NDL BIB ID: 8786593
• Web Site: http://id.ndl.go.jp/bib/8786593
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8786593
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed