Research of the High Voltage Etching Fuse for Protecting Semiconductors

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  • 高圧半導体保護用エッチングヒューズの研究
  • コウアツ ハンドウタイ ホゴヨウ エッチング ヒューズ ノ ケンキュウ

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Abstract

This paper describes the high voltage etching fuse for protecting semiconductors. At first the performance required to the fuse was investigated. Then test results of trial products of 7.2kV rating etching fuses were shown.<br>At present the specified national standard for high voltage fuse for semiconductor protection has not been established. Therefore, firstly we confirmed the general characteristics of high voltage fuses in accordance with JEM standard for the low-voltage fuses for the protection of semiconductor device. Next we investgated the breaking performance on the basis of the following 3 items, since the fuse applied to inverters must have special performances in addition to general characteristics.<br>(a) Possibility of endurance against maximum voltage occurring after current interruption, (b) Possibility of breaking current having the high di/dt value due to being discharged from smoothing capacitor in inverter circuit, and (c) Mechanical strength against fatigue by thermal expansion and shrinking due to repetition of high current flow.<br>It was found that an etching fuse have higher current breaking performance and mechanical strength. Current breaking test results exhibited that a 7.2kV, 100A rating fuse had small operating I2t value, that is excellent current breaking performance, and cleared above three points.

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