SnO<sub>2</sub>添加のZnOバリスタの課電劣化への影響

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タイトル別名
  • Effect of SnO<sub>2</sub> Addition on Electrical Degradation Characteristics of ZnO Varistors
  • SnO2添加のZnOバリスタの課電劣化への影響
  • SnO2 テンカ ノ ZnO バリスタ ノ カデン レッカ エノ エイキョウ

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The effects of SnO2 additon on the electrical degradation characteristics of Bi2O3-MnO2-Co3O4-added ZnO varistors were investigated by field-emission scanning electron microscopy (FE-SEM), energy dispersion X-ray spectroscopy (EDX), X-ray diffraction (XRD), voltage-current (V-I) characteristics, and capacitance-voltage (C-V) characteristics. The microstructure containing both twins of ZnO and Zn2SnO4-type spinel particles was observed at the grain boundary similar to Bi-Mn-Co-Sb2O3-added ZnO varistors. Spinel particles began to appear by the addition of SnO2 over approximately 0.5mol%. Before electrical degradation, value of nonlinearity index α of V-I characteristic for Bi-Mn-Co-SnO2-added samples was approximately 50 and varistor voltage was 120∼140V/mm. Varistor voltage increased with increasing the amount of SnO2. Value of α after the electrical degradation showed local maximum at approximately 0.1mol% with the increase of the amount of SnO2 and then showed local minimum at approximately 0.5mol% similar to the relative integral intensity of XRD diffraction peak for (004) plane at small amount of SnO2. It is suggested that the diffusion of oxygen ions through the grain boundary is affected by the change of crystal orientation of ZnO grains at the grain boundary by addition of small amount of SnO2. It is found that the increase of the varistor voltage by addition of SnO2 is due to the increase of the barrier height of Schottky barriers.

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