High-electron-mobility ZnO/ZnMgO field-effect transistors and their application in biosensing devices

• KOIKE Kazuto

  Nanomaterials Microdevices Research Center, Osaka Institute of Technology

Bibliographic Information

Other Title

• 高移動度ZnO/ZnMgO電界効果トランジスタとバイオセンサー応用
• コウイドウド ZnO ZnMgO デンカイ コウカ トランジスタ ト バイオセンサー オウヨウ

Abstract

Using c-axis-oriented single-crystalline ZnO/Zn_1-xMg_xO heterostructures grown on a-plane sapphire substrates by molecular beam epitaxy, the formation of a two-dimensional electron gas (2DEG) with high electron mobility at the heterointerface is analyzed. The 2DEG was found to be accumulated by an internal electric field induced predominantly by the difference in spontaneous polarization between the two adjacent oxides. We applied the 2DEG to a top-gate field-effect transistor with an amine-modified Zn_1-xMg_xO gate insulation layer, and demonstrated an amperometric operation in an ion-sensitive device suitable for biosensing applications.

Journal

• Oyo Buturi

  Oyo Buturi 77 (3), 296-300, 2008-03-10

  The Japan Society of Applied Physics

Keywords

• zinc oxide
• zinc magnesium oxide
• molecular beam epitaxy
• field-effect transistor
• two-dimensional electron gas
• polarization
• ion-sensors
• bio-sensors

Details

• CRID: 1390564227310660864
• NII Article ID: 10021108868
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.77.3_296
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 9406912
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9406912
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed