New Driving Method for Self Turn-off Semiconductor of High Power

• Kawabata Osamu

  Mitsubishi Heavy Industries, Ltd.

• Kamei Shyunsuke

  Mitsubishi Heavy Industries, Ltd.

• Shinoda Hisanobu

  Mitsubishi Heavy Industries, Ltd.

Bibliographic Information

Other Title

• 大電力自励半導体素子駆動法
• ダイデンリョク ジレイ ハンドウタイ ソシ クドウホウ

Abstract

This paper shows the new driving method for self turn-off devices of high power. The driving circuit by this method consists of mainly three transformers, switching circuits at these primary side and passive components like as diode, capacitors at these secondary side. Because all soft circuits of low power like as switching controller, signal receivers can be set at these primary side, conventional measures at the grounded side against outer noises and surges come to be much effective. This new method makes use of diodes as passive switches to prevent outputs of d. c. circuit from shorting through those secondary windings.

Journal

• IEEJ Transactions on Fundamentals and Materials

  IEEJ Transactions on Fundamentals and Materials 128 (4), 283-288, 2008

  The Institute of Electrical Engineers of Japan

Keywords

• driving method, high power semiconductor, self turn-off device, GTO, transformer, diodes, outer noise

Details

• CRID: 1390001204593507072
• NII Article ID: 10021129708
• NII Book ID: AN10136312
• DOI: 10.1541/ieejfms.128.283
• ISSN: 13475533
• ISSN: 03854205
• NDL BIB ID: 9452027
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9452027
• Web Site: http://www.jstage.jst.go.jp/article/ieejfms/128/4/128_4_283/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed