フラッシングスプレーCVD法を用いたHfO_2薄膜の作成 Preparation of HfO_2 Thin Films Using Flashing Spray CVD Method

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The authors proposed the novel evaporation supply method, flashing spray chemical vapor deposition (FS-CVD). In the experiment, tetrakisethylmethylamidohafnium (TEMAH) was used as the precursor and n-pentane was used as the low boiling point organic solvent. The critical consolute temperature of TEMAH and n-pentane mixed material solution was 276K. The vapor pressure of the mixed material solution was ten times higher than that of TEMAH by formation of two-phase region. HfO<sub>2</sub> film was deposited on Si wafer by using TEMAH and n-pentane with FS-CVD. As the result, the uniformity of HfO<sub>2</sub> film was +/-5% and film thickness was 133.6nm. The uniformity of HfO<sub>2</sub> film of refractive index was +/-5% and refractive index was 1.63. It is found that the precursor was evaporated by flash boiling and HfO<sub>2</sub> film was deposited by decomposition.

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 128(6), 456-457, 2008-06-01

    一般社団法人 電気学会

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被引用文献:  4件中 1-4件 を表示

各種コード

  • NII論文ID(NAID)
    10021130118
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    03854205
  • データ提供元
    CJP書誌  CJP引用  J-STAGE 
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