Performance Improvement and Application of Organic Thin-film Transistor

• Kumaki Daisuke

  Tokyo Institute of Technology

• Tokito Shizuo

  Tokyo Institute of Technology NHK Science & Technical Research Laboratories

Bibliographic Information

Other Title

• 有機ＴＦＴの高性能化と応用展開
• ユウキ TFT ノ コウセイノウカ ト オウヨウ テンカイ

Abstract

The interfaces, organic semiconductor/gate insulator and organic semiconductor/ source-drain (S-D) electrodes, in organic thin-film transistors (TFTs) are crucial for the improvement of transistor characteristics. We describe (1) the improvement of mobility and lowering driving voltage by treating the gate-insulator surface with self-assembled monolayers, and (2) the reduction of contact resistance by employing a carrier injection layer for the S-D electrodes in bottom-contact organic TFT.

Journal

• IEEJ Transactions on Fundamentals and Materials

  IEEJ Transactions on Fundamentals and Materials 128 (7), 467-470, 2008

  The Institute of Electrical Engineers of Japan

Keywords

• organic thin-film transistor
• interface control
• surface treatment
• carrier injection layer

Details

• CRID: 1390282679570094080
• NII Article ID: 10021130146
• NII Book ID: AN10136312
• DOI: 10.1541/ieejfms.128.467
• ISSN: 13475533
• ISSN: 03854205
• NDL BIB ID: 9564969
• Web Site: http://id.ndl.go.jp/bib/9564969
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9564969
• Web Site: http://www.jstage.jst.go.jp/article/ieejfms/128/7/128_7_467/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed