InP-Based InGaAsSbN Quantum Well Laser Diodes in 2.MU.m Wavelength Region

• Kawamura Yuichi

  Osaka Pefecture University CREST-JST

Bibliographic Information

Other Title

• ＩｎＰベース波長２μｍ帯ＩｎＧａＡｓＳｂＮ赤外量子井戸レーザ
• InP ベース ハチョウ 2 ミューmタイ InGaAsSbN セキガイ リョウシ イド レーザ

Abstract

InGaAsSbN quantum well (QW) laser diodes on InP in 2μm wavelength region were grown by molecular beam epitaxy (MBE). It was found that increase in Sb composition improved properties of InGaAsSbN QW laser diodes. We observed electroluminescence at 4.51μm at room temperature for InAsSbN QW laser diodes, and laser operation at 2.31 2μm at 190K. Annealing effects were also studied.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 128 (5), 727-731, 2008

  The Institute of Electrical Engineers of Japan

Keywords

• InGaAsSbN
• InP
• 2μm quantum well laser diodes

Details

• CRID: 1390282679582686592
• NII Article ID: 10021132313
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.128.727
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 9495393
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9495393
• Web Site: http://www.jstage.jst.go.jp/article/ieejeiss/128/5/128_5_727/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed