Development of 230-270 nm AlGaN-Based Deep UV LEDs
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- Hirayama Hideki
- RIKEN (The Institute of Physical and Chemical Research) JST CREST
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- Yatabe Tohru
- RIKEN (The Institute of Physical and Chemical Research) Saitama University
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- Noguchi Norimichi
- RIKEN (The Institute of Physical and Chemical Research) Saitama University
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- Kamata Norihiko
- Saitama University JST CREST
Bibliographic Information
- Other Title
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- 230-270nm深紫外AlGaN系LEDの進展
- 230 270nm シンシガイ AlGaNケイ LED ノ シンテン
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Abstract
We demonstrated AlGaN multi-quantum well (MQW) deep ultraviolet (UV) light-emitting diodes (LEDs) with wavelength in the range of 227.5-273 nm fabricated on high-quality AlN buffers on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). We realized crack-free, thick AlN buffer on sapphire with low threading dislocation density (TDD) and atomically flat surface by using ammonia (NH3) pulse-flow multi-layer (ML) growth technique. We obtained single-peaked operation of the AlGaN-MQW LED with wavelength of 227.5 nm, which is the shortest wavelength of AlGaN-based LED on sapphire. The maximum output power and external quantum efficiency (EQE) of the 261 and 227.5 nm LEDs were 1.65 mW and 0.23% under room-temperature (RT) continuous-wave (CW) operation, and 0.15mW and 0.2% under RT pulsed operation, respectively.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 128 (5), 748-756, 2008
The Institute of Electrical Engineers of Japan
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Details
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- CRID
- 1390282679582697728
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- NII Article ID
- 10021132357
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 9495489
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed