Variability in Scaled MOS Transistors: Present Status and Measures

• Hiramoto Toshiro

  Institute of Industrial Science, University of Tokyo MIRAI-Selete

• Takeuchi Kiyoshi

  MIRAI-Selete

• Nishida Akio

  MIRAI-Selete

Bibliographic Information

Other Title

• 増大する微細ＭＯＳトランジスタの特性ばらつき：現状と対策
• ゾウダイスル ビサイ MOS トランジスタ ノ トクセイ バラツキ ゲンジョウ ト タイサク

Abstract

The present status of variability in characteristics of the state-of-the-art MOS transistors is presented. The statistics of threshold voltage of arrayed transistors show the normal distribution. Special emphasis is placed on the analysis of random threshold voltage fluctuations. A new method to compare the amount of random variations in different fabs and different technologies is proposed. Finally, the measures to the variability of scaled CMOS are discussed.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 128 (6), 820-824, 2008

  The Institute of Electrical Engineers of Japan

Keywords

• MOSFET
• random dopant fluctuation
• variation
• threshold voltage

Details

• CRID: 1390001204606014336
• NII Article ID: 10021132489
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.128.820
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 9531720
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9531720
• Web Site: http://www.jstage.jst.go.jp/article/ieejeiss/128/6/128_6_820/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed