Improvement in Device Performances of InP-Based HEMTs by Thinning a Barrier Layer

• Hara Naoki

  Fujitsu Limited

• Takahashi Tsuyoshi

  Fujitsu Limited

• Makiyama Kozo

  Fujitsu Limited

• Ohki Tosihiro

  Fujitsu Laboratories Ltd.

Bibliographic Information

Other Title

• 障壁層薄層化によるＩｎＰ系ＨＥＭＴの特性改善
• ショウヘキソウ ハクソウカ ニ ヨル InPケイ HEMT ノ トクセイ カイゼン

Abstract

The dependences of source resistance, R_s, transconductance, g_m, gate capacitance, C_gs, C_gd, and cutoff frequency, f_T, of InP-based HEMTs on an InAlAs barrier layer thickness, d, were investigated. We divided R_s into 4 elements and analyzed the effect of thinning a barrier layer. The resistance originated from the large band discontinuity between InAlAs and InGaAs decreased by thinning a barrier layer, while the resistance in the gate-recessed region increased. As a result, InP-based HEMT with d=10 nm showed lowest R_s. On the other hand, g_m increased monotonically with d, due to the reduction of the gate to channel distance, and g_m^int reached to 2.6 S/mm at d=5 nm. We also estimated f_T by using small-signal measurements. f_T increased with the reduction of d, which results in the improvement in noise characteristics.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 128 (6), 861-864, 2008

  The Institute of Electrical Engineers of Japan

Keywords

• InP-based HEMT
• InAlAs/InGaAs
• Thin Barrier Layer

Details

• CRID: 1390001204606013184
• NII Article ID: 10021132586
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.128.861
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 9531814
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9531814
• Web Site: http://www.jstage.jst.go.jp/article/ieejeiss/128/6/128_6_861/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed