ナノメータMOSFETにおける容量パラメータの直接測定 Direct Measurement of Capacitance Parameters in Nanometer-Scale MOSFETs

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抄録

A simple measurement method is proposed for extracting capacitances in nanometer-scale metal-oxide-semiconductor field-effect transistors (MOSFETs). The method utilizes two serially connected MOSFETs and an optional metal layer above the intermediate node between MOSFETs. Gate-drain overlap capacitance and capacitances around the intermediate node, including one related to the metal layer, can be obtained by measuring the transfer current when two MOSFETs are alternately turned on at high frequency. High sensitivity in the order of attofarad is demonstrated using silicon-on-insulator (SOI) MOSFETs with gate length of 140∼300 nm and channel width of 320 nm. The proposed method is useful not only in optimizing the high-frequency performance of the scale-down devices, but also in estimating the instability (i.e. <i>kT</i>/<i>C</i> noise) and single-electron charging effect in nanometer-scale circuits.

収録刊行物

  • 電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and System Society 128(6), 905-911, 2008-06-01

    一般社団法人 電気学会

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各種コード

  • NII論文ID(NAID)
    10021132673
  • NII書誌ID(NCID)
    AN10065950
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854221
  • NDL 記事登録ID
    9531948
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-795
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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