Dependence of crack generation process on crystal orientation in scratching of gallium arsenide

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  • ＧａＡｓのスクラッチ加工におけるクラック発生機構の結晶方位依存性　　第２報：押込み加工における結晶方位依存性
  • GaAs ノ スクラッチ カコウ ニ オケル クラック ハッセイ キコウ ノ ケッショウ ホウイ イソンセイ ダイ2ホウ オシコミ カコウ ニ オケル ケッショウ ホウイ イソンセイ
  • 第2報：押込み加工における結晶方位依存性

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Abstract

This study was performed to investigate the generation process of crack in gallium arsenide (GaAs) in the grinding process. Scratching experiments of GaAs performed on a previously developed scratching machine with a tilt stage indicated that the crack generation process of GaAs is strongly dependent on the crystal orientation and is different from that of silicon. In the present study, indentation tests were performed to investigate the crack generation process. The results indicated that crack generation differed due to the crystal orientation, and median cracks were observed in the <100> directions. A large number of lateral and median cracks were generated in the [011] and [0-1-1] directions rather than the [0-11] and [01-1] directions. In addition, larger brittle fractures occurred due to the interaction of the stress field when the indentation areas were closed. These results indicated that the depth of cut and distance between indentation areas are important factors to prevent brittle fractures.

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