Surface Sink Effects on Void Formation in GaSb and InSb under Ion Irradiation

• Nitta Noriko

  Research Reactor Institute, Kyoto University

• Ohoka Yukari

  Department of Environmental Systems Engineering, Kochi University of Technology

• Sato Koichi

  Research Reactor Institute, Kyoto University

• Xu Qiu

  Research Reactor Institute, Kyoto University

• Hayashi Yoshihiko

  Research Reactor Institute, Kyoto University

• Yoshiie Toshimasa

  Research Reactor Institute, Kyoto University

• Taniwaki Masafumi

  Department of Environmental Systems Engineering, Kochi University of Technology

抄録

Cellular defect structure forms on GaSb, InSb and Ge surfaces irradiated with energetic ions. These structures are generated after void formation via the movement of point defects induced by ion irradiation. In this transmission electron microscopic study, void formation by thin foil irradiation (irradiation after polishing for transmission electron microscopy (TEM)) was compared with void formation by bulk irradiation (cross-sectioning after ion irradiation), in order to investigate the effect of surface sinks for the point defects. The voids formed in GaSb and InSb by thin foil irradiation with 60 keV Sn⁺ at a temperature of 100–150 K were smaller than those formed by bulk irradiation. The diameters and densities of the voids increased rapidly as the ion dose increased from 1×10¹⁴ to 2×10¹⁴ ions/cm² under both types of irradiation. Amorphous halos were observed in the selected area diffraction patterns (SAED) of the thin foil irradiation specimens in addition to the main spots of the zincblende structure at a dose of 1×10¹⁴ ions/cm². This finding contrasts with the polycrystalline ring patterns observed in the SAED of the bulk specimen under the same dose. It was concluded that the easy escape of interstitials to the surface assists both void formation and amorphization in thin foil irradiation.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 49 (7), 1546-1549, 2008

  公益社団法人 日本金属学会

キーワード

• thin foil irradiation
• bulk irradiation
• gallium antimonide
• indium antimonide
• germanium
• tin ion
• III-V compound semiconductor
• void
• point defects
• vacancy
• interstitial
• transmission electron microscopy
• amorphous

詳細情報

• CRID: 1390282679225876224
• NII論文ID: 10021148153
• NII論文ID: 130004454035
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.mbw200729
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 9555575
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9555575
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/49/7/49_MBW200729/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可