In situ observation of diamond gasification and the crystallographic relationship of graphite formed on the surface of diamond
-
- Kashiwaya Yoshiaki
- Graduate School of Engineering, Hokkaido University
-
- Iwasa Maki
- Graduate School of Engineering, Hokkaido University
-
- Ishii Kuniyoshi
- Graduate School of Engineering, Hokkaido University
書誌事項
- タイトル別名
-
- <I>In Situ</I> Observation of Diamond Gasification and the Crystallographic Relationship of Graphite Formed on the Surface of Diamond
この論文をさがす
抄録
Recently, a property of diamond as a semiconductor is focused on by many researchers. For the mass production, it is important to develop the manufacturing process. As it is thought that the ionic milling process has limitations, the application of gasification reactions with oxidizing gases such as CO2, H2O and O2 is the best option.<BR>In this study, reaction behaviors of diamond at temperatures of more than 1273 K were investigated under a wide range of oxygen potentials, and the crystallographic relationship from diamond to graphite was clarified.<BR>A graphite layer was formed on the surface of diamond under both Ar gas with an oxygen potential of less than 100 ppm, and a CO2-Ar mixture (30 vol%). The Raman spectrum consisted of the amorphous carbon and graphite. However, the graphite formed differed from ordinary graphite in the reactivity. Furthermore, the crystallographic relationship between diamond and graphite was determined to be (111)D||(002)G.
収録刊行物
-
- MATERIALS TRANSACTIONS
-
MATERIALS TRANSACTIONS 49 (7), 1579-1588, 2008
公益社団法人 日本金属学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001204248906880
-
- NII論文ID
- 10021148265
- 130004454020
-
- NII書誌ID
- AA1151294X
-
- ISSN
- 13475320
- 13459678
-
- NDL書誌ID
- 9555636
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可