Fabrication of Al-doped Transparent Conducting ZnO Film on COP Substrates by PLD Method

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  • NAKAMURA Atsuhiro
    Department of Electronics, Information and Communication Engineering, College of Engineering, Osaka Sangyo University
  • MICHIHATA Ryota
    Department of Electronics, Information and Communication Engineering, College of Engineering, Osaka Sangyo University
  • SUZUKI Akio
    Department of Electronics, Information and Communication Engineering, College of Engineering, Osaka Sangyo University
  • AOKI Takanori
    Department of Electronics, Information and Communication Engineering, College of Engineering, Osaka Sangyo University
  • MATSUSHITA Tatsuhiko
    Department of Electronics, Information and Communication Engineering, College of Engineering, Osaka Sangyo University
  • OKUDA Masahiro
    Okuda Technical Office

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  • パルスレーザー堆積法によりシクロオレフィンポリマー基板上に作製したアルミニウムドープ酸化亜鉛系透明導電膜
  • パルス レーザー タイセキホウ ニ ヨリ シクロオレフィン ポリマー キバンジョウ ニ サクセイシタ アルミニウム ドープ サンカ アエンケイ トウメイ ドウデン マク

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Abstract

  Approximately 230 nm-thick Al-doped transparent conducting zinc oxide films (AZO) have been deposited on Cyclo Olefin Polymer (COP) substrates with ZnO buffer layer fabricated under oxygen partial pressure of 0.5~5.3 Pa, by pulsed laser deposition (PLD) using ArF excimer laser (λ=193 nm). When the ZnO buffer layer was fabricated with oxygen partial pressure of 5.3 Pa, the lowest resistivity obtained for the AZO film was 4.12×10-4 Ω•cm.<br>

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