Preparation and properties of novel intergrowth system of BiS(VS2)n (1[less-than over equal to]n[less-than over equal to]15)

• Harada Koichi

  Laboratory for Solid State Chemistry, Okayama University of Science

• Ohtani Tsukio

  Laboratory for Solid State Chemistry, Okayama University of Science

書誌事項

タイトル別名

• Preparation and Properties of Novel Intergrowth System of BiS(VS2)n (1.LEQ.n.LEQ.15)

抄録

Ternary sulfides of BiS(VS₂)_n (1 ≤ n ≤ 15) were prepared by heating the elemental mixtures in evacuated silica tubes at 1073 K. X-ray diffraction and electron diffraction measurements showed that BiS(VS₂)_1.50 has a misfit layer structure, where the BiS layers are randomly lacked from the known misfit layer sulfide of (BiS)_1.16VS₂. BiS(VS₂)_1.50 has a good conduction, showing a phase transition around 150 K possibly due to the CDW instability. The conduction of BiS(VS₂)_1.50 was interpreted by the electron donation from BiS into the semiconductive VS₂. BiS(VS₂)_1.50 showed an antiferromagnetic ordering at ca. 30 K, and has a fairly small effective magnetic moments suggesting the strong itinerancy. It was found that the compounds of BiS(VS₂)_n with 3 ≤ n ≤ 15 have the intergrowth structures composed of BiS(VS₂)₃ and VS₂ phases. Such a great variety of composite materials have never been investigated so far.

収録刊行物

• 粉体および粉末冶金

  粉体および粉末冶金 55 (3), 185-191, 2008

  一般社団法人 粉体粉末冶金協会

キーワード

• Bismuth vanadium sulfides
• misfit layer compound
• intergrowth structure
• CDW transition
• strong electron correlation

詳細情報

• CRID: 1390001206306977280
• NII論文ID: 10021172883
• NII書誌ID: AN00222724
• DOI: 10.2497/jjspm.55.185
• COI: 1:CAS:528:DC%2BD1cXjvFCitLs%3D
• ISSN: 18809014
• ISSN: 05328799
• NDL書誌ID: 9436628
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9436628
• 本文言語コード: en
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