Heat Resistant Metallization Technique for SiC Power Devices

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著者

    • HANAMURA Akihiro
    • Research Prototype and Test Department, Nissan Research Center, Nissan Motor Co., Ltd.
    • SUZUKI Tatsuhiro
    • Society and Frontier Laboratory, Nissan Research Center, Nissan Motor Co., Ltd.
    • TANIMOTO Satoshi
    • Society and Frontier Laboratory, Nissan Research Center, Nissan Motor Co., Ltd.
    • SUZUKI Tadashi
    • Society and Frontier Laboratory, Nissan Research Center, Nissan Motor Co., Ltd.

収録刊行物

  • Review of automotive engineering

    Review of automotive engineering 29(3), 375-380, 2008-07-01

参考文献:  22件中 1-22件 を表示

  • <no title>

    MATSUNAMI H.

    The semiconductor SiC technology and the application, 2003

    被引用文献1件

  • <no title>

    ARAI K.

    The basics on the SiC device and the application, 2003

    被引用文献1件

  • <no title>

    HORNBERGER J.

    IEEE Aerospace Conference Proceedings (Big Sky, MT), 2004 4, 2538-2555, 2004

    被引用文献1件

  • <no title>

    CROFTON J.

    Stat. Sol. (b) 202, 581-603, 1997

    被引用文献1件

  • <no title>

    TANIMOTO S.

    Silicon Carbide-Recent Major Advances, 2003

    被引用文献1件

  • <no title>

    DEVATY R. P. Eds.

    Silicon Carbide and Related Materials 2005 Pittsburgh, USA, Sept. 18-23, 2005

    被引用文献1件

  • <no title>

    KIRITANI N.

    Mater. Sci. Forum 433-436, 669-672, 2003

    被引用文献1件

  • <no title>

    ROBBLE K.

    Mater. Sri. Forum 338-342, 981-984, 2000

    被引用文献1件

  • <no title>

    MIYANAGA R.

    J.P. Patent 3871607, 2006

    被引用文献1件

  • <no title>

    ENDO T.

    J.P. Patent Laid-open 2006-332358, 2006

    被引用文献1件

  • <no title>

    KAWAI J.

    J.P. Patent Laid-open 2006-332357, 2006

    被引用文献1件

  • <no title>

    KAKANAKOVA-GEORGIEVA A.

    Thin Solid Films 343-344, 637-341, 1999

    被引用文献1件

  • <no title>

    CAO Yu

    Appl. Surf. Sci. 241, 392-402, 2005

    被引用文献1件

  • A critical review of ohmic and rectifying contacts for silicon carbide

    PORTER L. M.

    Materials Science and Engineering B34, 83-105, 1995

    被引用文献8件

  • <no title>

    RASTEGAEVA M. G.

    Inst. Phys. Conf. Ser 142, 581-584, 1996

    被引用文献1件

  • <no title>

    ARNODO C.

    Inst. Phys. Conf. Ser 142, 577-580, 1996

    被引用文献1件

  • <no title>

    HAN Sang. Youn.

    Appl. Phys. Lett. 79(12), 1816-1818, 2001

    被引用文献2件

  • <no title>

    COLE M. W.

    J. Appl. Phys. 88(5), 2652-2657, 2000

    被引用文献2件

  • <no title>

    PECZ B.

    Diamond and Related Materials 6, 1428-1431, 1997

    被引用文献3件

  • <no title>

    DEEB C.

    Appl. Phys. Lett. 84(7), 1117-1119, 2004

    被引用文献2件

  • <no title>

    NAKAMURA T.

    The Hosei University ion beam engineering laboratory report 19, 27-30, 1998

    被引用文献1件

  • <no title>

    NOBLANC O.

    Inst. Phys. Conf. Ser 155, 609-612, 1996

    被引用文献2件

各種コード

  • NII論文ID(NAID)
    10021915662
  • NII書誌ID(NCID)
    AA11945222
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13494724
  • データ提供元
    CJP書誌 
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