Material Selection for the Metal Gate/High-k Transistors
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- AKASAKA Y.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- MIYAGAWA K.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- KARIYA A.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- SHOJI H.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- AOYAMA T.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- KUME S.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- SHIGETA M.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- OGAWA O.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- SHIRAISHI K.
- Tsukuba University
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- UEDONO A.
- Tsukuba University
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- YAMABE K.
- Tsukuba University
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- CHIKYOW T.
- National Research Institute of Material Science
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- NAKAJIMA K.
- National Research Institute of Material Science
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- YASUHIRA M.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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- YAMADA K.
- Waseda University
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- ARIKADO T.
- Semiconductor Leading Edge Technologies, Inc. (Selete)
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収録刊行物
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2004 196-197, 2004-09-15
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- CRID
- 1573668925402099328
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- NII論文ID
- 10022538181
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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