Electroabsorptive Properties of InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well (FACQW)

• ARAKAWA Taro

  Graduate School of Engineering, Yokohama National University

• TAKIMOTO Kazuhiro

  Graduate School of Engineering, Yokohama National University

• MIYAZAKI Shiro

  Graduate School of Engineering, Yokohama National University

• YAMAGUCHI Koichiro

  Graduate School of Engineering, Yokohama National University

• HANEJI Nobuo

  Graduate School of Engineering, Yokohama National University

• NOH Joo-Hyong

  Yokogawa Electric Corporation

• TADA Kunio

  Graduate School of Engineering, Kanazawa Institute of Technology

Journal

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 682-683, 2006-09-13

Details

• CRID: 1571135650625501312
• NII Article ID: 10022546428
• NII Book ID: AA10777858
• Text Lang: en
• Data Source:
  • CiNii Articles