Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
-
- HASHIMOTO Hideaki
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- YAMADA Ryuta
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- ARIMA Kenta
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- UCHIKOSHI Junichi
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- MORITA Mizuho
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
この論文をさがす
収録刊行物
-
- Extended abstracts of the ... Conference on Solid State Devices and Materials
-
Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 860-861, 2006-09-13
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1573105975462438528
-
- NII論文ID
- 10022546987
-
- NII書誌ID
- AA10777858
-
- 本文言語コード
- en
-
- データソース種別
-
- CiNii Articles