Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate

  • HASHIMOTO Hideaki
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • YAMADA Ryuta
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • ARIMA Kenta
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • UCHIKOSHI Junichi
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • MORITA Mizuho
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

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詳細情報 詳細情報について

  • CRID
    1573105975462438528
  • NII論文ID
    10022546987
  • NII書誌ID
    AA10777858
  • 本文言語コード
    en
  • データソース種別
    • CiNii Articles

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