In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
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- FURUKAWA Hirokazu
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- HIGASHI Seiichiro
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- OKADA Tatsuya
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- KAKU Hirotaka
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- MURAKAMI Hideki
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- MIYAZAKI Seiichi
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2007 376-377, 2007-09-19
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詳細情報 詳細情報について
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- CRID
- 1572543025508546048
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- NII論文ID
- 10022549196
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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