Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

• TOMATSU Kenji

  Department of Physics and Electronics, Osaka Prefecture University

• HAMADA Takashi

  Department of Physics and Electronics, Osaka Prefecture University

• NAGASE Takashi

  Department of Physics and Electronics, Osaka Prefecture University

• KOBAYASHI Takashi

  Department of Physics and Electronics, Osaka Prefecture University

• MURAKAMI Shuichi

  Technology Research Institute of Osaka Prefecture

• MATSUKAWA Kimihiro

  Osaka Municipal Technical Research Institute

• NAITO Hiroyoshi

  Department of Physics and Electronics, Osaka Prefecture University

収録刊行物

• Extended abstracts of the ... Conference on Solid State Devices and Materials

  Extended abstracts of the ... Conference on Solid State Devices and Materials 2007 640-641, 2007-09-19

詳細情報

• CRID: 1573105975472638208
• NII論文ID: 10022550084
• NII書誌ID: AA10777858
• 本文言語コード: en
• データソース種別:
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