書誌事項
- タイトル別名
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- Fabrication of Electrode Groove on Silicon Solar Cell using High-Pressure Surface Discharge
- コウキアツ エンメン ホウデン ニ ヨル タイヨウ デンチヨウ デンキョクコウ ノ サクセイ
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We proposed a low-cost plasma process technique to fabricate narrower front electrode grooves on a single crystalline silicon solar cell, in which the surface discharge operated at high-pressure etched the silicon nitride film of 150 nm thickness on a silicon layer. The results showed that the surface discharge could effectively etch the silicon nitride film in a short time and that a high etching rate more than 3000 nm/min was obtained. The narrow and uniform grooves with the width of less than 70 μm were obtained when the pressure in a chamber, the back electrode length and the etching time were 152 kPa, 2 mm and 10 s, respectively. The narrower electrode groove could be obtained when the back electrode length was short and the pressure was high.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 128 (12), 733-739, 2008
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204594635264
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- NII論文ID
- 10024470383
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 9730808
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可