Characterization of Depletion Layer using Photoluminescence Technique

• Singh, Vipul

• Thakur, Anil K.

• Pandey, Shyam Sudhir

• Takashima, Wataru

• Kaneto, Keiichi

Abstract

The depletion layer formed at the interface of aluminum (Al) with poly(3-hexylthiophene-2, 5-diyl) (P3HT) has been studied, using the bias dependent photoluminescence (PL) spectra in indium tin oxide (ITO)/P3HT/Al sandwiched cells. A quenching in the PL intensity has been observed under the reverse bias conditions, which has been attributed to the increase in the depletion layer width. A direct relationship between the depletion layer width and the PL quenching has been derived and explained.

Journal Article

Journal

• Applied Physics Express

  Applied Physics Express 1 (2), 021801-1-021801-3, 2008-01-25

  社団法人応用物理学会

Details

• CRID: 1050564288864320768
• NII Article ID: 10025078944
• NII Book ID: AA12295133
• ISSN: 18820778
• ISSN: 18820786
• HANDLE: 10228/5968
• NDL BIB ID: 9393287
• Web Site: https://kyutech.repo.nii.ac.jp/records/4748
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9393287
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • NDL
  • CiNii Articles