Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High-Electron-Mobility Transistor
Search this article
Journal
-
- Applied Physics Express
-
Applied Physics Express 1 (2), 023001-, 2008-02-25
The Japan Society of Applied Physics
- Tweet
Details 詳細情報について
-
- CRID
- 1050001338996366336
-
- NII Article ID
- 10025079151
-
- NII Book ID
- AA12295133
-
- ISSN
- 18820786
- 18820778
-
- HANDLE
- 2115/33900
-
- NDL BIB ID
- 9393389
-
- Text Lang
- en
-
- Article Type
- journal article
-
- Data Source
-
- IRDB
- NDL
- CiNii Articles