Nitrogen gas flow driven unintentional incorporation of Al during the growth of dilute nitride semiconductor by plasma-assisted molecular beam epitaxy

• Shudong Wu

• Masakazu Kato

• Masayuki Uchiyama

書誌事項

タイトル別名

• Nitrogen gas flow driven unintentional incorporation of Al during the growth of dilute nitride semiconductor by plasma assisted molecular beam epitaxy

収録刊行物

• Applied physics express : APEX

  Applied physics express : APEX 1 (3), 2008-03

  Tokyo : Japan Society of Applied Physics

詳細情報

• CRID: 1520854805334399744
• NII論文ID: 10025079674
• NII書誌ID: AA12295133
• ISSN: 18820778
• NDL書誌ID: 9441616
• Web Site: http://id.ndl.go.jp/bib/9441616
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9441616
• 本文言語コード: en
• NDL 雑誌分類:
  • ZM35(科学技術--物理学)
• データソース種別:
  • NDL
  • CiNii Articles