High electron mobility exceeding 104 cm[2] V[-1] s[-1] in MgxZn1-xO/ZnO single heterostructures grown by molecular beam epitaxy
Bibliographic Information
- Other Title
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- High electron mobility exceeding 104 cm 2 V 1 s 1 in MgxZn1 xO ZnO single heterostructures grown by molecular beam epitaxy
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 1 (5), 2008-05
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1520291853548372480
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- NII Article ID
- 10025080527
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 9556914
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles