Vertically Aligned GaP/GaAs Core-Multishell Nanowires Epitaxially Grown on Si Substrate

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We report the core-multishell GaP/GaAs/GaP nanowires grown in a metalorganic vapor phase epitaxy system by a combination of the vapor--liquid--solid growth mode and conventional vapor phase epitaxy method. By growing GaAs sacrificial segments on the core GaP nanowires followed by selective chemical etching, Au particles were removed and top faceted core-shell nanowires were formed after the shell growth. Analysis by transmission electron microscopy indicated that the shell layers were epitaxially grown on the sides of core GaP nanowires.

収録刊行物

  • Applied physics express

    Applied physics express 1(6), 064003-064003-3, 2008-06-25

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10025081062
  • NII書誌ID(NCID)
    AA12295133
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    18820778
  • NDL 記事登録ID
    9545062
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z78-A526
  • データ提供元
    CJP書誌  CJP引用  NDL  JSAP 
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