Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

Search this Article

Author(s)

Journal

  • Applied physics express

    Applied physics express 1(8), "81102-1"-"81102-3", 2008-08-25

    Japan Society of Applied Physics

References:  19

  • <no title>

    KIKKAWA T.

    Jpn. J. Appl. Phys. 44, 4896, 2005

    Cited by (1)

  • <no title>

    UEMOTO Y.

    IEDM Tech. Dig., 2007 861, 2007

    Cited by (1)

  • <no title>

    KUZMIK J.

    IEEE Electron Device Lett. 22, 510, 2001

    Cited by (1)

  • <no title>

    HIGASHIWAKI M.

    Jpn. J. Appl. Phys. 43, L768, 2004

    Cited by (1)

  • <no title>

    JEGANATHAN K.

    J. Cryst. Growth 304, 342, 2007

    Cited by (1)

  • <no title>

    GONSCHOREK M.

    Appl. Phys. Lett. 89, 062106, 2006

    Cited by (1)

  • <no title>

    GAQUIERE C.

    IEEE MTT-S Int. Microwave Symp. Dig., 2007 2136, 2007

    Cited by (1)

  • <no title>

    SARAZIN N.

    Electron. Lett. 43, 1317, 2007

    Cited by (1)

  • <no title>

    SHIBATA T.

    Mater. Res. Soc. Symp. Proc. 693, 219, 2002

    Cited by (1)

  • <no title>

    MIYOSHI M.

    Appl. Phys. Lett. 85, 1710, 2004

    Cited by (1)

  • <no title>

    MIYOSHI M.

    J. Vac. Sci. Technol. B 23, 1527, 2005

    Cited by (1)

  • <no title>

    HIGASHIWAKI M.

    IEEE Electron Device Lett. 26, 139, 2005

    Cited by (1)

  • <no title>

    ABERMANN S.

    Semicond. Sci. Technol. 22, 1272, 2007

    Cited by (1)

  • <no title>

    KUZMIK J.

    Phys. Status Solidi A 204, 2019, 2007

    Cited by (1)

  • <no title>

    MEDJDOUB F.

    Electron. Lett. 43, 691, 2007

    Cited by (1)

  • <no title>

    MEDJDOUB F.

    Electron. Lett. 43, 309, 2007

    Cited by (1)

  • <no title>

    MEDJDOUB F.

    Electron. Lett. 42, 779, 2006

    Cited by (1)

  • <no title>

    GILLESPIE J. K.

    Int. Conf. Compound Semiconductor Manufacturing Technology (CS MANTECH Conference) Dig., 2007 73, 2007

    Cited by (1)

  • AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190GHz

    HIGASHIWAKI Masataka , MIMURA Takashi , MATSUI Toshiaki

    Applied physics express 1(2), "21103-1"-"21103-3", 2008-02-25

    References (16) Cited by (11)

Cited by:  8

Codes

  • NII Article ID (NAID)
    10025081817
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • ISSN
    18820778
  • NDL Article ID
    9621262
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  CJPref  NDL 
Page Top