Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

• Kasai, Seiya

• Asai, Tetsuya

Abstract

Investigation of stochastic resonance in GaAs-based nanowire field-effect transistors (FETs) controlled by Schottky wrap gate and their networks is described. When a weak pulse train is given to the gate of the FET operating in a subthreshold region, the correlation between the input-pulse and source-drain current increases by adding input noise. Enhancement of the correlation is observed in a summing network of the FETs. Measured correlation coefficient of the present system can be larger than that in a linear system in the wide range of noise. An analytical model based on the electron motion over a gate-induced potential barrier quantitatively explains the experimental behaviors.

Journal

• Applied Physics Express

  Applied Physics Express 1 (8), 083001-, 2008-08-25

  Japan Society of Applied Physics

Details

• CRID: 1050001339000931712
• NII Article ID: 10025082033
• NII Book ID: AA12295133
• ISSN: 18820786
• ISSN: 18820778
• HANDLE: 2115/38669
• NDL BIB ID: 9621347
• Web Site: http://id.ndl.go.jp/bib/9621347
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9621347
• Text Lang: en
• Article Type: journal article
• Data Source:
  • IRDB
  • NDL
  • CiNii Articles