Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

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Author(s)

    • Deura Momoko DEURA Momoko
    • Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
    • IKUHARA Yuichi
    • Institute of Engineering Innovation, School of Engineering, The University of Tokyo
    • TAKENAKA Mitsuru
    • Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
    • TAKAGI Shinichi
    • Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
    • NAKANO Yoshiaki
    • Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
    • SUGIYAMA Masakazu
    • Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo

Journal

  • Applied physics express

    Applied physics express 2(1), "11101-1"-"11101-3", 2009-01-25

    Japan Society of Applied Physics

References:  13

Cited by:  2

Codes

  • NII Article ID (NAID)
    10025083963
  • NII NACSIS-CAT ID (NCID)
    AA12295133
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • ISSN
    18820778
  • NDL Article ID
    9776968
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z78-A526
  • Data Source
    CJP  CJPref  NDL 
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