Fabrication of asymmetric GaN/InN/InGaN/GaN quantum-well light emitting diodes for reducing the quantum-confined stark effect in the blue-green region
Bibliographic Information
- Other Title
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- Fabrication of asymmetric GaN InN InGaN GaN quantum well light emitting diodes for reducing the quantum confined stark effect in the blue green region
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Journal
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- Applied physics express : APEX
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Applied physics express : APEX 2 (2), 2009-02
Tokyo : Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1523669554784813440
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- NII Article ID
- 10025084321
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- NII Book ID
- AA12295133
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- ISSN
- 18820778
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- NDL BIB ID
- 10158979
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- Text Lang
- en
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- NDL Source Classification
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- ZM35(科学技術--物理学)
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- Data Source
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- NDL
- CiNii Articles