ワイヤ放電スライスされたシリコンウェハのブラスト加工  [in Japanese] Blasting of affected layer of silicon surface sliced by wire electric discharge machining  [in Japanese]

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Abstract

太陽電池用シリコンのマルチワイヤソーにかわる新しいスライス方法として,ワイヤ放電加工が研究されている.しかし,放電加工時にウェハ表面に変質層が形成されるため,これを除去することが課題となっている.そこで本研究では,セラミックス等の硬脆材料の加工に適用されているブラスト加工を用いて変質層の除去を試みた.その結果,変質層をブラスト加工で除去できることを明らかにするとともに,従来のマルチワイヤソーでスライスされたウェハと同程度の表面性状をもつウェハを作製することができた.

To reduce kerf loss and wafer thickness, wire electric discharge machining (W-EDM) has been studied as a new method for slicing of polycrystalline silicon ingots. The EDM-affected layer with wire material on the sliced surface formed during W-EDM must be removed. In this study, a blasting process was applied to remove the affected layer. Aluminum oxide and silicon carbide grains 10 – 40μm in mean diameter were used as the blasting media. The results indicated that blasting with WA#1000 abrasive could remove the affected layer and also make the wafer surface smoother than that sliced with a multi-wire saw. Energy dispersive X-ray analysis indicated elimination of contamination by elements such as copper and oxygen on the blasted wafer. The etch rate of the blasted wafer was higher than that before blasting, and this result supported those of element analysis. A solar cell was fabricated from blasted silicon wafer sliced by W-EDM.

Journal

  • Journal of the Japan Society for Abrasive Technology

    Journal of the Japan Society for Abrasive Technology 53(8), 494-498, 2009-08-01

    The Japan Society for Abrasive Technology

References:  9

Cited by:  1

Codes

  • NII Article ID (NAID)
    10025103225
  • NII NACSIS-CAT ID (NCID)
    AN10192823
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    09142703
  • NDL Article ID
    10367356
  • NDL Source Classification
    ZN11(科学技術--機械工学・工業)
  • NDL Call No.
    Z16-1147
  • Data Source
    CJP  CJPref  NDL  J-STAGE 
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