Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
-
- HIROKANE Takaaki
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- HASHIMOTO Hideaki
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- KANZAKI Daisuke
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- URABE Shinichi
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- ARIMA Kenta
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- UCHIKOSHI Junichi
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
- MORITA Mizuho
- Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
この論文をさがす
抄録
We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition. As the pH decreases in the pH range of 2.7 to 7.0, the flatband voltage shift toward the negative voltage increases. The differences in the flatband voltage shift in capacitance-voltage curves are related to the mobile ionic charge density in solutions with different pH values or DNA molecules.
収録刊行物
-
- Analytical Sciences
-
Analytical Sciences 25 (1), 101-104, 2009
社団法人 日本分析化学会
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390282679231943424
-
- NII論文ID
- 130004441733
- 10025209631
-
- NII書誌ID
- AA10500785
-
- ISSN
- 13482246
- 09106340
-
- NDL書誌ID
- 9759453
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可