Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices

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  • HIROKANE Takaaki
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • HASHIMOTO Hideaki
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • KANZAKI Daisuke
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • URABE Shinichi
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • ARIMA Kenta
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • UCHIKOSHI Junichi
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
  • MORITA Mizuho
    Department of Precision Science and Technology, Graduate School of Engineering, Osaka University

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Abstract

We report on the use of sensing devices that have a metal-insulator-gap-insulator-semiconductor structure. We have used capacitance-voltage measurements from a metal-insulator-gap-insulator-semiconductor sensing device to characterize different pH solutions and deoxyribonucleic acid (DNA) solutions. Hysteresis in the capacitance-voltage curves results from mobile ionic charges in the solutions and the influence of changes on the sensing surface condition. As the pH decreases in the pH range of 2.7 to 7.0, the flatband voltage shift toward the negative voltage increases. The differences in the flatband voltage shift in capacitance-voltage curves are related to the mobile ionic charge density in solutions with different pH values or DNA molecules.

Journal

  • Analytical Sciences

    Analytical Sciences 25 (1), 101-104, 2009

    The Japan Society for Analytical Chemistry

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