Thermodynamic Analysis for Vapour Epitaxial Growth of III-V Solid Solution Semiconductors

• YAMAGUCHI Katsunori

  Faculty of Engineering, Iawate University

Bibliographic Information

Other Title

• 新素材：環境・エネルギー材料の新展開　　ＩＩＩ‐Ｖ族混晶半導体の化学熱力学と結晶成長プロセス
• 3-5族混晶半導体の化学熱力学と結晶成長プロセス
• 3 5ゾクコンショウハンドウタイ ノ カガク ネツリキガク ト ケッショウ セイチョウ プロセス

Abstract

The group III-V compound semiconductors and their solid solutions are important materials used in high speed electronic and optical electronic devices. Crystal growth of these semiconductor materials involves processes between the solid and liquid phases or solid and gas phase at near equilibrium conditions. Therefore, knowledge of thermodynamic and thermochemical properties for the semiconductor systems is important for providing optimum conditions in the analysis of processes for the crystal growth. In this report, some thermodynamic and thermochemical data such as heat capacity, standard entropy, heat and free energy of formation of compounds and heat of mixing of solid solutions on calorimetry are summarized. Base on these data, the vapor epitaxial growth of the III-V solid solution crystal are analyzed thermodynamically. The calculated compositions of the alloys have been compared with experiment, showing remarkably good agreement.

Journal

• Journal of MMIJ

  Journal of MMIJ 125 (6/7), 375-380, 2009

  The Mining and Materials Processing Institute of Japan

Keywords

• III-V Compound Semiconductor
• Mixed Crystal Semiconductor
• Thermodynamic Property
• Thermochemical Data
• Heat of Mixing

Details

• CRID: 1390282680250734080
• NII Article ID: 10025312577
• NII Book ID: AA12188381
• DOI: 10.2473/journalofmmij.125.375
• ISSN: 18840450
• ISSN: 18816118
• NDL BIB ID: 10378468
• Web Site: http://id.ndl.go.jp/bib/10378468
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10378468
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed