Growth of Semipolar InN on r-plane (10-12) Sapphire by RF-MBE

• Nakatani Katsuhiko

  Dept. of Photonics, Ritsumeikan Univ.

• Kawashima Keisuke

  Dept. of Photonics, Ritsumeikan Univ.

• Yamaguchi Tomohiro

  Res. Org. Sci. & Eng., Ritsumeikan Univ.

• Muto Daisuke

  Dept. of Photonics, Ritsumeikan Univ.

• Araki Tsutomu

  Dept. of Photonics, Ritsumeikan Univ.

• Nanishi Yasushi

  Dept. of Photonics, Ritsumeikan Univ.

Bibliographic Information

Other Title

• ＲＦ－ＭＢＥ法によるｒ面（１０－１２）Ｓａｐｐｈｉｒｅ基板上半極性面ＩｎＮの結晶成長
• RF MBEホウ ニ ヨル rメン 10 12 Sapphire キバン ジョウ ハンキョクセイメン InN ノ ケッショウ セイチョウ

Abstract

In this study, we report the growth of semipolar InN films on r-plane (10-12) substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). Semipolar InN films were successfully obtained by controlling the substrate nitridation temperature between 400°C and 600°C. We characterized the epitaxial relationship between r-plane sapphire and the obtained semipolar films using X-ray diffraction (XRD). It is found that c-axis of semipolar InN was declined by 21°from the direction perpendicular to r-plane sapphire surface along a-axis of InN.

Journal

• IEEJ Transactions on Electronics, Information and Systems

  IEEJ Transactions on Electronics, Information and Systems 129 (11), 1974-1977, 2009

  The Institute of Electrical Engineers of Japan

Keywords

• InN
• semipolar
• RF-MBE
• <i>r</i>-plane sapphire

Details

• CRID: 1390282679583976320
• NII Article ID: 10025533035
• NII Book ID: AN10065950
• DOI: 10.1541/ieejeiss.129.1974
• ISSN: 13488155
• ISSN: 03854221
• NDL BIB ID: 10481867
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10481867
• Web Site: http://www.jstage.jst.go.jp/article/ieejeiss/129/11/129_11_1974/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed