Doping effect of Dy on leakage current and oxygen sensing property of SrTiO3 thin film prepared by PLD

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  • WAKIYA Naoki
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • KIMURA Yusuke
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • SAKAMOTO Naonori
    Department of Materials Science and Chemical Engineering, Shizuoka University
  • FU Desheng
    Graduate School of Materials Science and Technology, Shizuoka University
  • HARA Toru
    Development Planning Division, Taiyo Yuden Co., Ltd.
  • ISHIGURO Takashi
    Development Planning Division, Taiyo Yuden Co., Ltd.
  • KIGUCHI Takanori
    Institute for Materials Research, Tohoku University
  • SHINOZAKI Kazuo
    Department of Metallurgy and Ceramics Science
  • SUZUKI Hisao
    Graduate School of Materials Science and Technology, Shizuoka University

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抄録

Polycrystalline Dy-doped SrTiO3 thin films deposited by pulsed laser deposition (PLD) on CeO2-buffered yttria-stabilized zirconia (YSZ) single crystal substrates showed oxygen sensing characteristics at room temperature. The oxygen gas sensing characteristics depended on the amount of Dy-doping, and 1.5 mol% Dy-doping was most effective. The oxygen gas sensing characteristics were closely related to leakage current characteristics of Dy-doped SrTiO3 thin film deposited on ZnIn2O4/YSZ/Si(001) substrates. The suppression of leakage current by Dy-doping suggests that Ti4+ is substituted by Dy3+, and the Dy3+ acts as an acceptor. Further doping of Dy3+ brought about the increase of the leakage current, and it lowered the oxygen gas sensitivity.

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