単結晶グラフェン基板の創製に向けたSiC上エピタキシャル少数層グラフェンの層数解析  [in Japanese] Analysis of Number of Layers in Epitaxial Few-Layer Graphene Grown on SiC towards Single-Crystal Graphene Substrate  [in Japanese]

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Abstract

  We review our research toward single-crystal growth of epitaxial few-layer graphene (FLG) on SiC substrates, in which surface electron microscopy techniques have played essential roles. We have established a method for evaluating the number of graphene layers microscopically using low-energy electron microscopy. The number-of-layers dependence of the work function and C1s binding energy is determined using photoelectron emission microscopy. We use LEEM and thermionic electron emission microscopy to investigate the growth processes of epitaxial FLG. Uniform bilayer graphene a few micrometers in size is obtained by annealing in UHV.<br>

Journal

  • Journal of the Vacuum Society of Japan

    Journal of the Vacuum Society of Japan 53(2), 101-108, 2010-02-20

    The Vacuum Society of Japan

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Codes

  • NII Article ID (NAID)
    10026292473
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    REV
  • ISSN
    18822398
  • NDL Article ID
    10606205
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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