紫外光励起オゾンによるシリコン酸化膜および化学気相成長法(CVD)-SiO_2膜の二段階酸化膜の界面特性評価  [in Japanese] Interface Properties of the Two Step Oxide Layers by UV Light Excited Ozone Silicon Oxidation and Chemical Vapor Deposition (CVD)-SiO_2 Film  [in Japanese]

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Author(s)

Abstract

  SiO<sub>2</sub> film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O(<sup>1</sup>D)), which is generated by the UV irradiation to high concentrated (>90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD)(O(<sup>1</sup>D)-CVD) process is used. The SiO<sub>2</sub> film thickness of the direct Si oxidation for 10 min. in the two-step SiO<sub>2</sub> film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO<sub>2</sub> film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.<br>

Journal

  • Journal of the Vacuum Society of Japan

    Journal of the Vacuum Society of Japan 53(3), 230-233, 2010-03-20

    The Vacuum Society of Japan

References:  8

Codes

  • NII Article ID (NAID)
    10026292863
  • NII NACSIS-CAT ID (NCID)
    AN00119871
  • Text Lang
    JPN
  • Article Type
    SHO
  • ISSN
    18822398
  • NDL Article ID
    10666088
  • NDL Source Classification
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL Call No.
    Z16-474
  • Data Source
    CJP  NDL  J-STAGE 
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