Formation, Atomic Structures, and Physical Properties of Si-SiO2 System

• HATTORI Takeo

  New Industry Creation Hatchery Center, Tohoku University Frontier Research Center, Tokyo Institute of Technology

• HIROSE Kazuyuki

  Institute of Space and Astronautical Science, JAXA

Bibliographic Information

Other Title

• Ｓｉ‐ＳｉＯ２系の形成・構造・物性
• 分野別記念解説 Si-SiO2系の形成・構造・物性
• ブンヤベツ キネン カイセツ Si SiO2ケイ ノ ケイセイ コウゾウ ブッセイ

Abstract

This article summarizes recent progress and current scientific understanding of atomic and/or electronic structures of ultrathin SiO₂ films and/or its interface with Si substrates in addition to the review of scientific achievements done in the past 30 years.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 31 (1), 30-34, 2010

  The Surface Science Society of Japan

Keywords

• Si
• SiO<Sub>2</Sub>
• interface
• atomic structure
• electronic structure

Details

• CRID: 1390001206458051968
• NII Article ID: 10026319264
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.31.30
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 10553620
• Web Site: http://id.ndl.go.jp/bib/10553620
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10553620
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/31/1/31_1_30/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed