Impact of High Heating Rate, Low Temperature, and Short Time Annealing on the Realization of Low Resistivity Cu Wire

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  • Onuki Jin
    Department of Materials Science and Engineering, Ibaraki University
  • Tamahashi Kunihiro
    Department of Materials Science and Engineering, Ibaraki University
  • Namekawa Takashi
    Department of Materials Science and Engineering, Ibaraki University
  • Sasajima Yasushi
    Department of Materials Science and Engineering, Ibaraki University

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Abstract

Low resistivity Cu wires were obtained by high heating rate, short time, and low temperature annealing even at a temperature 100 K lower and for a time 67% shorter than the conventional H2 annealing temperature and time. This was due to promotion of the grain growth by the release of grain boundary energy when the heating rate to the peak temperature was set at 1.7 K/s. Resistivity of Cu wires made by the new process at 573 K was lower than that of wires made by conventional H2 annealing at 673 K for 30 min.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 51 (9), 1715-1717, 2010

    The Japan Institute of Metals and Materials

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