CdTe半導体を用いた高エネルギー分解能ガンマ線イメージャーの開発  [in Japanese] Developments of High Energy Resolution Gamma-ray Imagers using CdTe semiconductors  [in Japanese]

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Author(s)

Journal

  • Ionizing radiation.

    Ionizing radiation. 36(2), 59-77, 2010-08-01

    応用物理学会放射線分科会

References:  55

Cited by:  1

Codes

  • NII Article ID (NAID)
    10026604079
  • NII NACSIS-CAT ID (NCID)
    AN00313954
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    02853604
  • NDL Article ID
    10810900
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-432
  • Data Source
    CJP  CJPref  NDL 
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