Low-energy irradiation damage in single wall carbon nanotubes

• SUZUKI Satoru

  NTT Basic Research Laboratories, NTT Corporation

Bibliographic Information

Other Title

• 単層CNTの低エネルギー照射損傷
• タンソウ CNT ノ テイエネルギー ショウシャ ソンショウ

Abstract

Single wall carbon nanotubes are damaged by irradiation of electrons or photons whose energy is several electron volts to several ten kiloelectron volts (low-energy irradiation damage). Therefore, it is necessary to pay attention to the damage when we use analytical tools equipped with an electron gun or a vacuum ultraviolet light source. In this article, some characteristics of low-energy irradiation damage and its defect properties are summarized. Metal-semiconductor transition of the electric properties induced by defects is also discussed.

Journal

• Oyo Buturi

  Oyo Buturi 79 (10), 920-924, 2010-10-10

  The Japan Society of Applied Physics

Keywords

• single wall carbon nanotubes
• low-energy irradiation damage
• electron irradiation
• photon irradiation
• defect
• metal -semiconductor transition

Details

• CRID: 1390282752335666560
• NII Article ID: 10026689664
• NII Book ID: AN00026679
• DOI: 10.11470/oubutsu.79.10_920
• ISSN: 21882290
• ISSN: 03698009
• NDL BIB ID: 10856823
• Web Site: http://id.ndl.go.jp/bib/10856823
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10856823
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • CiNii Articles
• Abstract License Flag: Disallowed