Chemical-State-Selective Mapping at Nanometer Scale Using Synchrotron Radiation and Photoelectron Emission Microscopy
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- HIRAO Norie
- Japan Atomic Energy Agency
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- BABA Yuji
- Japan Atomic Energy Agency
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- SEKIGUCHI Tetsuhiro
- Japan Atomic Energy Agency
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- SHIMOYAMA Iwao
- Japan Atomic Energy Agency
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- HONDA Mitsunori
- Japan Atomic Energy Agency
Bibliographic Information
- Other Title
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- The best paper in Bunseki Kagaku, 2008: Chemical-state-selective mapping at nanometer scale using synchrotron radiation and photoelectron emission microscopy
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Abstract
For surface analyses of semiconductor devices and various functional materials, it has become indispensable to analyze valence states at nanometer scale due to the rapid developments of nanotechnology. Since a method for microscopic mapping dependent on the chemical bond states has not been established so far, we have developed a photoelectron emission microscopy (PEEM) system combined with synchrotron soft X-ray excitation. The samples investigated were Si/SiOx micro-patterns prepared by O2+ ion implantation in Si(001) wafer using a mask. PEEM images excited by various photon energies around the Si K-edge were observed. The lateral spatial resolution of the system was about 41 nm. The brightness of each spot in PEEM images changed depending on the photon energy, due to the X-ray absorption intensity of the respective chemical state. Since the surface of this sample was topographically flat, it has been demonstrated that the present method can be applied to observations of the microscopic pattern, depending not on the morphology, but only on the valence states of silicon. We have also in-situ measured the changes of the PEEM images upon annealing, and elucidated the mechanism of the lateral diffusion of oxygen and valence states of silicon at the nanometer scale.
Journal
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- Analytical Sciences
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Analytical Sciences 26 (8), 835-840, 2010
The Japan Society for Analytical Chemistry
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Details 詳細情報について
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- CRID
- 1390282679233867392
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- NII Article ID
- 10026784665
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- NII Book ID
- AA10500785
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- ISSN
- 13482246
- 09106340
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- NDL BIB ID
- 10779883
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed