Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits

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Author(s)

Abstract

Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metaloxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.

Journal

  • IEICE Transactions on Electronics

    IEICE Transactions on Electronics 91(2), 145-149, 2008-02-01

    The Institute of Electronics, Information and Communication Engineers

References:  16

Cited by:  1

Codes

  • NII Article ID (NAID)
    10026816558
  • NII NACSIS-CAT ID (NCID)
    AA10826283
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • ISSN
    09168524
  • Data Source
    CJP  CJPref  J-STAGE 
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