Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector

• MIYAMOTO Yasuyuki

  Department of Physical Electronics, Tokyo Institute of Technology

• TAKAHASHI Shinnosuke

  Department of Physical Electronics, Tokyo Institute of Technology

• KOBAYASHI Takashi

  Department of Physical Electronics, Tokyo Institute of Technology

• SUZUKI Hiroyuki

  Department of Physical Electronics, Tokyo Institute of Technology

• FURUYA Kazuhito

  Department of Physical Electronics, Tokyo Institute of Technology

Abstract

We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75nm. SHBTs were fabricated with three different emitter widths — 200, 400, and 600nm — and the highest cutoff frequency that was obtained was 468GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90nm.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E93-C (5), 644-647, 2010

  The Institute of Electronics, Information and Communication Engineers

Keywords

• InGaAs/InP
• HBT
• Kirk effect
• current spreading

Details

• CRID: 1390282679353670016
• NII Article ID: 10026825631
• NII Book ID: AA10826283
• DOI: 10.1587/transele.e93.c.644
• ISSN: 17451353
• ISSN: 09168524
• Web Site: http://www.jstage.jst.go.jp/article/transele/E93.C/5/E93.C_5_644/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed