High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair

• ASAI Shin'ichi

  Department of Electrical Engineering, Hokkaido University

• UENO Ken

  Department of Electrical Engineering, Hokkaido University

• ASAI Tetsuya

  Department of Electrical Engineering, Hokkaido University

• AMEMIYA Yoshihito

  Department of Electrical Engineering, Hokkaido University

Abstract

We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13MΩ for a tail current of 10nA and 135MΩ for 1nA. The chip area was 105µm × 110µm. Our resistor circuit is useful to construct many high-resistance resistors in a small chip area.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E93-C (6), 741-746, 2010

  The Institute of Electronics, Information and Communication Engineers

Keywords

• CMOS
• integrated circuit
• resistor
• high resistance
• differential circuit
• subthreshold

Details

• CRID: 1390001204376663552
• NII Article ID: 10026825925
• NII Book ID: AA10826283
• DOI: 10.1587/transele.e93.c.741
• ISSN: 17451353
• ISSN: 09168524
• HANDLE: 2115/44312
• Web Site: http://www.jstage.jst.go.jp/article/transele/E93.C/6/E93.C_6_741/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed