Analysis of Phase Noise Degradation Considering Switch Transistor Capacitances for CMOS Voltage Controlled Oscillators

• MURAKAMI Rui

  Department of Physical Electronics, Tokyo Institute of Technology

• HARA Shoichi

  Department of Physical Electronics, Tokyo Institute of Technology

• OKADA Kenichi

  Department of Physical Electronics, Tokyo Institute of Technology

• MATSUZAWA Akira

  Department of Physical Electronics, Tokyo Institute of Technology

抄録

In this paper we present a study on the design optimization of voltage-controlled oscillators. The phase noise of LC-type oscillators is basically limited by the quality factor of inductors. It has been experimentally shown that higher-Q inductors can be achieved at higher frequencies while the oscillation frequency is limited by parasitic capacitances. In this paper, the minimum transistor size and the degradation of the quality factor caused by a switched-capacitor array are analytically estimated, and the maximum oscillation frequency of VCOs is also derived from an equivalent circuit by considering parasitic capacitances. According to the analytical evaluation, the phase noise of a VCO using a 65nm CMOS is 2dB better than that of a 180nm CMOS.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E93-C (6), 777-784, 2010

  一般社団法人 電子情報通信学会

キーワード

• CMOS
• VCO
• inductor
• phase noise
• quality factor
• multiple divide
• switched capacitor

詳細情報

• CRID: 1390282679353355136
• NII論文ID: 10026825992
• NII書誌ID: AA10826283
• DOI: 10.1587/transele.e93.c.777
• ISSN: 17451353
• ISSN: 09168524
• Web Site: http://www.jstage.jst.go.jp/article/transele/E93.C/6/E93.C_6_777/_pdf
• 本文言語コード: en
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